IEICE Electronics Express
Online ISSN : 1349-2543
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Highly linear mm-wave CMOS low noise amplifier
Kambiz HadipourAbdolreza Nabavi
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2010 Volume 7 Issue 1 Pages 20-26

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Abstract

This paper presents a highly linear mm-wave low noise amplifier utilizing a linear attenuating output stage. An analytical method is given for optimum design of this stage by Volterra series. Using a 0.13µum CMOS technology, the IIP3 is improved by more than 10dB reaching to +6dBm, without any extra power consumption. The LNA has a flat gain of 12.7dB with less than ±0.1dB variation from 26 to 35.8GHz and consumes 15.6mW of power. While the input-output matching requirements are well satisfied for this LNA, its noise figure is below 3.7dB over the entire band.

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© 2010 by The Institute of Electronics, Information and Communication Engineers
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