IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
Accurate large-signal FET model tailored for switching-mode power amplifier design
Lin-Sheng LiuJian-Guo MaGeok-Ing Ng
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2010 Volume 7 Issue 22 Pages 1672-1678

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Abstract

A large-signal FET model for the simulation and design of switching-mode high-efficiency power amplifiers (PAs) is presented. The proposed nonlinear model is constructed by accurately characterizing the ON and OFF behaviors of the active FET device, along with its parameter extraction associated with the specific regions. The robustness of the model in predicting the switching-mode operation of on-wafer GaN-based HEMTs is demonstrated by experimental results. Moreover, the model has been employed for designing an inverse Class-F PA using a commercial high-power GaN HEMT. Good agreement between amplifier simulation and measurement proves the validity of the proposed large-signal model.

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© 2010 by The Institute of Electronics, Information and Communication Engineers
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