IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
Effect of bias circuits on receiver band noise of GaAs HBT power amplifiers
Bobae KimKwangchan LeeJongsoo Lee
Author information
JOURNALS FREE ACCESS

2010 Volume 7 Issue 3 Pages 159-164

Details
Abstract

This paper presents the effect of different bias circuits configurations on the noise performance of GaAs HBT (heterojunction bipolar transistor) power amplifiers at the receiver band. Various bias circuits have been used for the power amplifier in an WCDMA (wideband code division multiple access) transmitter module including the output duplexer at PCS band (Tx: 1850 ∼ 1910MHz, Rx: 1930 ∼ 1990MHz). A bias circuit with cascode current mirrors for the 1st and the 2nd stages shows less than -180dBm/Hz receiver band noise with -39dBc of ACPR (adjacent channel power ratio) at 25.2dBm antenna output power.

Information related to the author
© 2010 by The Institute of Electronics, Information and Communication Engineers
Previous article Next article
feedback
Top