IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
5GHz band low phase noise Si-CMOS oscillator using FBAR
Shoichi TanifujiTuan Thanh TaSuguru KamedaTadashi TakagiKazuo Tsubouchi
Author information
JOURNALS FREE ACCESS

2010 Volume 7 Issue 3 Pages 165-169

Details
Abstract

In this paper, low phase noise 5GHz oscillator is presented. This oscillators designed with 90nm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, we used high Q value film bulk acoustic resonator (FBAR) instead of conventional LC resonant circuit. This FBAR oscillator has phase noise of lower than -130dBc/Hz at 1MHz offset.

Information related to the author
© 2010 by The Institute of Electronics, Information and Communication Engineers
Previous article Next article
feedback
Top