IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
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A study on precise control of PtSi work function by alloying with Hf
Jun GaoJumpei IshikawaShun-ichiro Ohmi
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2011 Volume 8 Issue 1 Pages 45-49

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Abstract

To reduce the contact resistance at source/drain regions in scaled CMOS, control of PtSi work function by alloying with Hf was investigated. Pt(10-20nm)/Hf(0-10nm)/n-Si(100) stacked layers were annealed at 400°C/60min in a flowing N2 ambient to form silicide layer. In the case of alloying with 3-6nm-thick Hf, it was found that barrier height (ΦBn) for electron was linearly reduced from 0.84eV to 0.56eV with Hf thickness in the initial stacked layer, which corresponds to the work function of 4.89eV and 4.61eV, respectively. Furthermore, the reduction of ΦBn could be precisely controlled by 94meV/nm with Hf thickness.

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© 2011 by The Institute of Electronics, Information and Communication Engineers
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