IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
Dependence of electrical properties of pentacene Thin-Film Transistor on active layer thickness
Naoto MatsuoAkira Heya
Author information

2011 Volume 8 Issue 6 Pages 360-366


The electrical properties of Organic thin-film transistor (OTFT) with a pentacene active layer of 3nm and 50nm were examined. By a new estimation method of applied voltage in channel layer of OTFT, it was found that the ratio of potential drop to lateral direction of channel at on-state is smaller than that at off-state and also that of 3nm thickness OTFT is larger than 50nm thickness. The on-state current of 3nm thickness OTFT was larger than that of 50nm thickness. The main reason of this phenomenon is due to the difference of the resistance of hole injection from Au to pentacene. The quantum-mechanical effect is also discussed.

Information related to the author
© 2011 by The Institute of Electronics, Information and Communication Engineers
Previous article Next article