IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543

This article has now been updated. Please use the final version.

A novel current-biased voltage-programmed pixel circuit with low temperature polycrystalline silicon thin film transistors for AMOLED
Yiling DingLi TianZunkai HuangQi ZhangNing WangHui WangSonglin Feng
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JOURNAL FREE ACCESS Advance online publication

Article ID: 12.20150899

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Abstract

This paper presents a novel current-biased voltage-programmed pixel circuit with low temperature polycrystalline silicon thin film transistors (LTPS-TFT) for active-matrix organic light-emitting diode (AMOLED) displays. The proposed 3T1C pixel circuit features a voltage data line to program pixel, and a fixed current source to compensate for non-idealities. In addition, the aging problem of the OLED could also be alleviated by the AC driving method. The simulation results indicate that the driving current has a deviation of less than 3% for ±0.5V threshold voltage variation. Besides, it is also demonstrated that the high driving speed can be realized by increasing the bias current.

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