Nonvolatile organic field-effect transistors fabricated on Al foil substrates

Min Gee Kim; Soo Yong Kim; Dae Hee Han; Byung-Eun Park

doi:10.1587/elex.14.20170143

This article has now been updated. Please use the final version.

Nonvolatile organic field-effect transistors fabricated on Al foil substrates

Min Gee Kim, Soo Yong Kim, Dae Hee Han, Byung-Eun Park

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Keywords: ferroelectric, nonvolatile transistor, flexible, P(VDF-TrFE), P3HT

JOURNAL FREE ACCESS Advance online publication

Article ID: 14.20170143

DOI https://doi.org/10.1587/elex.14.20170143

The final version of this article is now available: Vol. 14 (2017), No. 10 pp. 20170143-20170143

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Abstract

We fabricated metal-ferroelectric-metal capacitors and bottom-gate, top-contact nonvolatile ferroelectric transistors (FeFETs) using poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(3-hexylthiophene) (P3HT) on aluminum foil substrates. P(VDF-TrFE) and P3HT layers were formed by the sol-gel method at low temperature. FeFETs on Al foil substrates exhibited similar properties compared with those fabricated on other rigid and flexible substrates.

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