Low noise homodyne detection of terahertz waves by zero-biased InP/InGaAs Fermi-level managed barrier diode

Hiroshi Ito; Tadao Ishibashi

doi:10.1587/elex.14.20170722

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Low noise homodyne detection of terahertz waves by zero-biased InP/InGaAs Fermi-level managed barrier diode

Hiroshi Ito, Tadao Ishibashi

著者情報

キーワード: THz wave, homodyne detection, noise equivalent power

ジャーナルフリー早期公開

論文ID: 14.20170722

DOI https://doi.org/10.1587/elex.14.20170722

この記事には本公開記事があります。

The final version of this article is now available: Vol. 14 (2017), No. 18 pp. 20170722-20170722

詳細

抄録

Homodyne detection of terahertz (THz) waves by a zero-biased Fermi-level managed barrier (FMB) diode was investigated for the first time to reveal its fundamental characteristics in the mixing detection. The lowest noise equivalent power of 1.6 × 10^-17 W/√Hz was obtained at 300 GHz with a very low local oscillator power of 5 × 10^-7 W.

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