論文ID: 14.20170784
This paper intends to present a novel radiation-hardened SRAM cell by using the PMOS transistors stacked (each PMOS is split into two same sizes) and changing the inner topological structure on basis of the Quatro-10T. Combined with layout-level optimization design, the 3-D TCAD mixed-mode simulation results show that the novel design has a great single event upset (SEU) immune. Simultaneously, it is found to be tolerant of partial single-event multiple-node upsets (SEMNUs) due to the charge sharing among off-PMOS transistors. In addition, compared with the Quatro-10T, our proposed structure exhibits larger static noise margin (SNM) as well as lower power consumption in 65nm COMS technology.
