Article ID: 15.20180724
Memristor holds great potential for memory technology, neuromorphic systems and digital applications. For implementation in complex circuits, an accurate and predictive model is required to make significant progress. This paper introduces a model that is based on the physics of the device. The mathematical modeling helps in understanding the physical properties which determine the behavior of the memristor and also aid in the characterization of the device. Namely, i-v characterization and switching mechanism involved are examined. In our SPICE modeling, Simmons tunnel barrier is incorporated into the port and state equation. The SPICE equivalent circuit for the same is presented and discussed. The presented model satisfies the fingerprints of the memristor.