IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543

This article has now been updated. Please use the final version.

High-efficiency concurrent dual-band class-E power amplifier with extended maximum operating frequency
Hao ZouXiangdong HuangKaiyong Li
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JOURNAL FREE ACCESS Advance online publication

Article ID: 16.20190567

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Abstract

This paper presents a method for designing high-efficiency concurrent dual-band (DB) class-E power amplifier (PA) that operate above the theoretical maximum frequency (fmax). The excess output capacitances at the two desired frequencies can be compensated using the proposed output matching network without separate design of harmonic compensation network, thus the fundamental and harmonic impedances for DB optimum class-E operation are achieved above the fmax, considering the parasitics of the packaged transistor. For demonstration, the fabricated DB class-E PA using GaN HEMT features the maximum power-added efficiency (PAE) of 74.1% and 72.6% at 1.9 and 2.5 GHz, while the output power is 40.3 and 40.7 dBm, respectively.

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© 2019 by The Institute of Electronics, Information and Communication Engineers
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