抄録
A review is given of how the characteristics in plastic flow of a crystal observed on a macroscopic scale are understood in terms of dynamic processes of dislocations which take place on a microscopic scale inside it. Theoretical treatments are developed quantitatively for various dislocation processes which play important roles in determining the deformation characteristics in the case of a silicon crystal. The stressstrain curve is derived theoretically as a function of temperature, strain-rate and density of dislocations initially included in the crystal on the basis of dynamic characteristics of dislocations which have been clarified by experimental observations. It is demonstrated that a good agreement is obtained between theoretically derived stress-strain behavior and experimentally observed one.
