Preparation of Tin Oxide (SnO₂) thin Film Gas Sensor by PLD Method

Abstract

Tin oxide (SnO₂) thin films were deposited on silicon (100) and alumina substrates by using a pulsed laser deposition (PLD) method. X-ray diffraction pattern shows that crystallinity of the film increased with increasing oxygen gas pressure and substrate temperature. Gas sensitivity of the film for 0.31vol% H₂ gas increased with increasing oxygen gas pressure and substrate temperature. In addition, Pd doped SnO₂ thin films can be prepared using new PLD method combined with d.c. sputtering to prepare highly sensitive gas sensors.