2007 Volume 127 Issue 9 Pages 1294-1297
The ErSi2 nanowires were formed on Si (110) substrates by a self-assembled growth process without a high vacuum system. All of the nanowires were highly parallel and along the Si [1-10] direction. It was shown by structural analysis that the nanowires consisted of two types, which showed a similar surface morphology. The first type is ErSi2 nanowires buried into the Si substrate by a depth of 30nm, and the other is ErSi2 thin layers covering on wire-like Si surface. The later is suggested to be the remained structure after evaporation of the first type wires during the high temperature annealing.