IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
<Optoelectronics & Quantum Electronics>
Structure Analysis of Self-Assembled ErSi2 Nanowires Formed on Si(110) Substrates
Yusuke KatayamaRyouki WatanabeTomohiro KobayashiTakashi MeguroXinwei Zhao
Author information

Volume 127 (2007) Issue 9 Pages 1294-1297

Download PDF (670K) Contact us

The ErSi2 nanowires were formed on Si (110) substrates by a self-assembled growth process without a high vacuum system. All of the nanowires were highly parallel and along the Si [1-10] direction. It was shown by structural analysis that the nanowires consisted of two types, which showed a similar surface morphology. The first type is ErSi2 nanowires buried into the Si substrate by a depth of 30nm, and the other is ErSi2 thin layers covering on wire-like Si surface. The later is suggested to be the remained structure after evaporation of the first type wires during the high temperature annealing.

Information related to the author
© 2007 by the Institute of Electrical Engineers of Japan
Next article

Recently visited articles
Journal news & Announcements
  • A member of IEEJ can access the transactions of the Technical Society to which the member belongs. Please enter the My Page login ID in the subscriber number column and the birth date (year/month/date with one-byte characters: for example, 19800303) in the password column.