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IEEJ Transactions on Electronics, Information and Systems
Vol. 127 (2007) No. 9 P 1294-1297



<Optoelectronics & Quantum Electronics>

The ErSi2 nanowires were formed on Si (110) substrates by a self-assembled growth process without a high vacuum system. All of the nanowires were highly parallel and along the Si [1-10] direction. It was shown by structural analysis that the nanowires consisted of two types, which showed a similar surface morphology. The first type is ErSi2 nanowires buried into the Si substrate by a depth of 30nm, and the other is ErSi2 thin layers covering on wire-like Si surface. The later is suggested to be the remained structure after evaporation of the first type wires during the high temperature annealing.

Copyright © 2007 by the Institute of Electrical Engineers of Japan

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