The ErSi2 nanowires were formed on Si (110) substrates by a self-assembled growth process without a high vacuum system. All of the nanowires were highly parallel and along the Si [1-10] direction. It was shown by structural analysis that the nanowires consisted of two types, which showed a similar surface morphology. The first type is ErSi2 nanowires buried into the Si substrate by a depth of 30nm, and the other is ErSi2 thin layers covering on wire-like Si surface. The later is suggested to be the remained structure after evaporation of the first type wires during the high temperature annealing.
2007 by the Institute of Electrical Engineers of Japan