We demonstrated AlGaN multi-quantum well (MQW) deep ultraviolet (UV) light-emitting diodes (LEDs) with wavelength in the range of 227.5-273 nm fabricated on high-quality AlN buffers on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). We realized crack-free, thick AlN buffer on sapphire with low threading dislocation density (TDD) and atomically flat surface by using ammonia (NH3) pulse-flow multi-layer (ML) growth technique. We obtained single-peaked operation of the AlGaN-MQW LED with wavelength of 227.5 nm, which is the shortest wavelength of AlGaN-based LED on sapphire. The maximum output power and external quantum efficiency (EQE) of the 261 and 227.5 nm LEDs were 1.65 mW and 0.23% under room-temperature (RT) continuous-wave (CW) operation, and 0.15mW and 0.2% under RT pulsed operation, respectively.
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