Improvement of Subthreshold MOSFET Characteristics Employing Field Effect Bipolar Transistor

Abstract

A field effect transistor has the characteristic of high input resistance. Because a constant bias current is not necessary, it is widely utilized as a highly convenient element in existing integrated circuits. The exponential functional properties possessed by the bipolar transistor have the advantage of being able to realize large gain easily in comparison to the square power properties of the field effect transistor, but at present, the field effect transistor is used instead of the bipolar transistor. Amplifiers utilizing field effect transistors are inferior to those utilizing bipolar transistors from the standpoint of gain, output resistance, operational speed, etc.; consequently, in the next generation high speed communication technology, there is demand for an element that replaces the field effect transistor.
This paper analyzes a subthreshold MOSFET employing Field Effect Bipolar Transistor (FEBT), which has high intrinsic gain and high input resistance, does not require a bias voltage at the signal input terminal, and can be used as a high-function field effect bipolar transistor capable of low power source voltage operations that solves the problems that have become topics in the large-scale integrated circuits of today.