Development of AlGaN/GaN FETs for Power Supply

Abstract

AlGaN/GaN FET with a built-in SBD which has a reverse conductive operation and normally-off characteristics is fabricated for the purpose of designing GaN power device for power supply. The fabricated device exhibited a threshold voltage of +0.8V and excellent reverse conductive characteristics. In addition, low capacitance characteristics are obtained due to the reduction of mirror effect. From these results, it is confirmed that the fabricated device is effective for low loss power switching device.