電気学会論文誌C(電子・情報・システム部門誌)
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<電子物性・デバイス>
希土類添加半導体の発光における電子と正孔の役割
石井 真史Brian Towlson原子 進趙 新為小室 修二Bruce Hamilton
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2012 年 132 巻 8 号 p. 1255-1260

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The roles of electrons and holes in photo-excited samarium doped titanium dioxide (TiO2:Sm) thin film were investigated with electric measurement techniques. For this purpose, a structural modification using interface states in silicon oxide between TiO2:Sm and a conductive silicon substrate was used. Since the interface states make a barrier to electrons in positive DC bias VDC, selective injection of holes into TiO2:Sm can be realized in VDC>0. Photo-excited dielectric relaxation (PEDR) technique, namely frequency dispersion measurement of complex impedance under excitation light, and the selective injection revealed that the Sm excitation was induced by an electron trapping with a slow response of ∼12 Hz and following recombination with holes in host TiO2 with ∼950 Hz.

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© 2012 電気学会
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