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電気学会論文誌C(電子・情報・システム部門誌)
Vol. 132 (2012) No. 8 P 1261-1264

記事言語:

http://doi.org/10.1541/ieejeiss.132.1261

<電子物性・デバイス>

A p-GaN semiconductor is the more suitable photocathode material than a p-GaAs semiconductor, because a p-type semiconductor with wide band gap has large vacuum level shift caused by surface band bending. We measured quantum yield degradation and quantum yield spectrum of a p-GaN photocathode with an NEA surface. The p-GaN photocathode had the process of quantum yield degradation from the extraction of photocurrent and the residual gas, it is found to be important to suppress backs-pattering due to the increase of background pressure. From the dependence of quantum yield of the p-GaN photocathode on excitation wavelength, the quantum yield spectrum rapidly increased around the band gap of GaN as expected.

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