電気学会論文誌C(電子・情報・システム部門誌)
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<電子物性・デバイス>
3D/2.5D-IC TSVに向けた低温成膜SiNxの特性評価
小林 靖志中田 義弘中村 友二武山 眞弓佐藤 勝野矢 厚
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2015 年 135 巻 7 号 p. 733-738

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For realizing highly reliable Cu wiring in 3D/2.5D-IC, SiNx films formed by the reactive sputtering deposition and the plasma-enhanced chemical vapor deposition (PECVD) at low substrate temperatures are characterized and compared by use of X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectroscopy (FT-IR). The film density obtained by XRR shows clear difference between the sputtering and PECVD films. Si-H bonding concentrations obtained by analyzing FT-IR spectra show good correlations with the film densities independent of deposition methods and conditions. Lower density properties of PECVD films could be attributed to higher density of residual Si-H bonds in the films.

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