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電気学会論文誌C(電子・情報・システム部門誌)
Vol. 137 (2017) No. 1 P 13-19

記事言語:

http://doi.org/10.1541/ieejeiss.137.13

<電子物性・デバイス>

Efficiency and controllability of power electronics is highly affected by power device performances, such as low on-resistance and high speed switching. In recent years, SiC, GaN, and diamond are expected to be used for making superior power devices, since Si device performance is approaching the material limit. In this paper, we review recent advances of the new material devices, by picking up some papers presented in power-device related conferences and journals.

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