訂正：PiNダイオード高水準注入についてのシミュレーションと解析計算の比較による考察

抄録

This paper reports analytical evaluation for high level injection state of PiN diodes. In the analytical theory, we take account of current continuity at the both ends of i-layer, and its physical parameters are evaluated by comparison to device simulation results. Then, we analyze optimum parameters for maximum forward current by using the analytical theory. Besides, we employ R(resistance at forward biased PiN diode) × Q(stored carrier in i-layer) for the index of total performance. RQ has minimum value as a function of lifetime, and it is confirmed that longer lifetime and high current density operation has a great effect for RQ reduction.