量子エネルギー輸送モデルを用いた先端MOSFET電気特性に対する非平衡現象の影響の解析

抄録

In this paper, we have investigated non-equilibrium effects for advanced MOSFETs by using a device simulator with quantum energy transport (QET) model. The QET model allows to simulate non-equilibrium carrier transport as well as quantum confinement. The QET model includes the mobility model as a function of carrier temperature in order to consider the non-local effects. We have simulated advanced MOSFETs down to 20 nm gate length using the QET model. The QET model is compared with the quantum drift diffusion (QDD) model which includes a mobility model with local assumptions. It is found that the non-local mobility model is needed to simulate the advanced MOSFETs with less than 40 nm.