III-V族半導体を用いた耐圧1 kV級横型スーパー接合パワー素子のオン抵抗低減の可能性

抄録

Potentials of lateral hetero superjunction (HSJ) power devices, that are based on III-V semiconductors such as GaN and GaAs, are analyzed theoretically to clarify how the product R_ON·A of their on-resistance R_ON and device area A depends on the breakdown voltage. By focusing on power devices having the breakdown voltage of about 1kV, we clarify to which level the specific on-resistance R_ON·A of various devices can be reduced by the selection of the device structures and materials. It has been found out that the lowest limit of R_ON·A for HSJ devices can be lower than that of Si insulated gate bipolar transistors, and also than that of vertical power FETs based on SiC and/or GaN. We note in particular that not only GaN-based HSJ devices but also GaAs-based HSJ devices possess outstanding potential because of the high electron mobility nature of these heterojunction structures.