ナノシートMOSFETに関する電気特性のシート膜厚及びゲート電圧依存性の解析

抄録

In this paper, we have analyzed sheet thickness and gate voltage dependence of electrical characteristics for nanosheet MOSFETs using a device simulation that takes quantum confinement effects into account. Since the sheet thickness of nanosheet MOSFETs decreases to several nanometers, the simulated on-current shows significant reduction compared to the on-current required in the device design due to the quantum confinement effect. We analyze the relative difference between the on-current required in the device design and the simulated on-current and propose a design guideline using the relative difference. In order to suppress the relative difference of the on-currents within 3%, the minimum sizes of the sheet thickness are 3.4, 4.5, and 5.5 nm at supply voltages of 0.70, 0.60, and 0.50 V, respectively.