シリコンへの硫黄の過飽和ドーピングがもたらす光学的・電気的特性の変化

抄録

Hyperdoping of semiconductors with deep impurities is a promising method to form intermediate bands. Hyperdoped semiconductors can be prepared by ion implantation followed by pulsed laser melting. However, since hyperdoping is a nonequilibrium process, the correlation between the hyperdoping process and the physical properties of the hyperdoped semiconductor is not clear. In this study, we investigated the correlation between the hyper doping process and optical absorption and pn junction properties by hyperdoping of Si with S.