Bipolar transistors with an electrode control the surface potential on the emitter-base junction are fabricated, and the DC and 1/f noise characteristics of the transistors are evaluated. The 1/f noise in the transistors fabricated through the improved process were mainly generated at the bottom of the emitter regions. The contribution of the surface phenomena to the 1/f noise is less than 10% of the total 1/f noise. An equation is derived for the 1/f noise in bipolar transistors in terms of the recombination current in the emitter-base space charge regions. The equation is supported by the experimental results that the recombination-free transistor which are fabricated through the clean processes do not generate 1/f noise.
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