電気学会論文誌C(電子・情報・システム部門誌)
Online ISSN : 1348-8155
Print ISSN : 0385-4221
イオン注入法による圧力センサ用窒化シリコン薄膜の機械的物性制御
田畑 修杉山 進瀧川 光治五十嵐 伊勢美
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1990 年 110 巻 4 号 p. 228-234

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The Internal Stress and Young's modulus changes of LPCVD silicon nitride thin film by ion implantation were measured. The load-deflection measurement technique of the square membrane with size of 2mm×2mm was used. The tensile internal stress σ was reduced from 1.2 GPa to less than 0.1GPa and the Young's modulus E was reduced from 320 GPa to 260 Gpa. The effects of σ and E of a pressure sensor diaphragm, with a side of 2a and a thickness of t, on pressure sensitivity were calculated. In the case of (t/a)2_??_σ/E, lowering of sensitivity due to σ can not be neglected. Therefore, it appears that the sensitivity of micro-pressure sensor with silicon nitride film as the construction material for diaphragm can be improved by several times by utilizing the ion implantation technique.

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