1997 Volume 117 Issue 3 Pages 227-232
A new low temperature processing method to prepare SrBi2Ta2O9 thin films is proposed. These thin films were prepared on Pt/Ta/SiO2/Si substrates by a sol-gel method, and their structural and electrical properties were investigated. Films were annealed before and after the top Pt electrode deposition, respectively. The 1st annealing was performed in a 760Torr-oxygen ambient at 600°C for 30min., the 2nd annealing was performed in a 5Torr-oxygen ambient at 600°C for 30min.. The films were well crystallized and fine-grained after the 2nd annealing. The electrical characteristics of the 200-nm-thich film obtained by this new process, i.e., remanent polarization (Pr), coercive field (Ec), and the leakage current density (IL), were as follows; Pr=8.5μC/cm2, Ec=36kV/cm, IL =1×10-7A/cm2 (at 150kV/cm). This process is very attractive for highly integrated ferroelectric nonvolatile memory applications.