Preparation of Bi Layer Structured Ferroelectric Thin Film by Laser Ablation

SrBi₂Ta₂O₉ and Bi₄Ti₃O₁₂ Thin Films

Abstract

Bismuth layer-structured ferroelectric SrBi₂Ta₂O₉ and Bi₄Ti₃O₁₂ thin films have been prepared on Pt and Si at low temperature of 400-550°C by laser ablation method using an ArF excimer laser. Crystallographic properties of these films deposited at various substrate temperatures, laser frequencies and oxygen gas pressures are characterized. Depth profile of X-ray photoelectron spectra reveales a homogeneous composition but Bi oxidation is not satisfactory. Electrical properties of Bi₄Ti₃O₁₂ films on SiO₂/Si such as J-V and C-T characteristics are good. C-V hysteresis loop for SrBi₂Ta₂O₉ and Bi₄Ti₃O₁₂ films on SiO₂/Si and D-E hysteresis loop of Bi₄Ti₃O₁₂ film on Pt and Si are obtained