Process and Properties of One-mask Patterned Ferroelectric Integrated Capacitor

Abstract

A one-mask-patterned ferroelectric capacitor test structures designed with a 0.5μtm feature size were fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as as-deposited film. The one-mask-patterned ferroelectric capacitors with switching charge almost equal to as-deposited film were achieved. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology. However, the leakage current density for micron-size capacitors is as 2-10 times high as large capacitor. This current increase was found to be caused by perimeter leakage current through damaged layer on the PZT side-wall.