シリコンの表面マイグレーションを利用した新しい基板エンジニアリング～ESS (Empty Space in Silicon) による大面積SON (Silicon on Nothing) の形成～

抄録

A new technique to form the silicon on nothing (SON) structure is presented as an alternative to the silicon on insulator (SOI) structure. A large plate-shaped empty space in silicon (ESS) below the surface of the silicon substrate can be fabricated by connecting the spherical empty spaces, which are formed by the surface migration of silicon on patterned silicon substrate. ESS technique has a potential to change the micro-process for the fabrication oflarge-scale integrated circuits (LSI) and it can be applied to various manufacturing technologies.