p-Si (100) 上に形成された極薄SiO2膜の直接トンネル電流のWKB近似に基づく解析
2001 年 121 巻 3 号 p. 691-692
詳細
2001 年 121 巻 3 号 p. 691-692
The direct tunneling (DT) conduction in the low voltages for the n+poly-Si/SiO2/p-Si (100) with a thickness of 2.7_??_3.3nm is examined based on WKB method from a viewpoint of the inelastic scattering in the p-Si(100) substrate considering the influence of the electron effective mass in the n+poly-Si grains. It is shown that these considerations reproduce the measured DT currents in the low voltages.
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