IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
Process Technique for GaN Related Electron Devices
Kenji Shiojima
Author information
Keywords: GaN, HEMT
JOURNAL FREE ACCESS

2002 Volume 122 Issue 1 Pages 2-5

Details
Download PDF (768K)
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Article 1st page
Content from these authors
© The Institute of Electrical Engineers of Japan
Previous article Next article
Favorites & Alerts

Recently viewed articles
Announcements from publisher
  • A member of IEEJ can access the transactions of the Technical Society to which the member belongs. Please enter the My Page login ID in the subscriber number column and the birth date (year/month/date with one-byte characters: for example, 19800303) in the password column.
Predecessor

The transactions of the Institute of Electrical Engineers of Japan.C

The Journal of the Institute of Electrical Engineers of Japan

Related information

https://www.jstage.jst.go.jp/browse

Related journals
The Journal of The Institute of Electrical Engineers of Japan
IEEJ Transactions on Fundamentals and Materials
IEEJ Transactions on Power and Energy
IEEJ Transactions on Industry Applications
IEEJ Journal of Industry Applications
IEEJ Transactions on Sensors and Micromachines
IEEJ Transactions on Electrical and Electronic Engineering
Share this page
feedback
 Top