Fabrication and evaluation of short-gate AlGaN/GaN HEMTs

Abstract

We have fabricated short-gate A1GaN/GaN HEMTs by using electron beam lithography technique. The devices show good pinch-off characteristics, and typical parameters of g_m=195mS/mm, f_T=26GHz, f_max=80GHz, V_S=3.6 × 10⁶cm/s were obtained. We have also conducted photoluminescence and electroluminescence(EL) measurements in order to clarify the carrier transport mechanism. It is found that a single peak in the EL spectrum due to the intraband transition of the channel electrons in the high field region at the drain edge.