2021 Volume 141 Issue 3 Pages 197-201
Ti-doped vanadium dioxide (V0.75Ti0.25O2) thin films were fabricated by metal-organic decomposition (MOD). Precursor films were fabricated at a temperature of Tp = 300 ºC for 15 min in a N2 atmosphere. Then, these precursor films were fired at Tf = 520~600 ºC for tf = 15~45 min in a N2 atmosphere. From X-ray diffraction (XRD) patterns of the fired films, diffraction peaks indicating VO2(M) phase were observed with a wide range of Tf = 540~600 ºC. Furthermore, the peaks indicating VO2(M) phase were also observed with a wide range of tf = 15~45 min. Regarding the surface morphology of the films, the nanoparticles of 100~200 nm were densely packed. From R-T characteristics of the films, the phase transition with a rapid resistance change and hysteresis loop disappeared completely at Tf = 560~600 ºC. Relatively flat temperature dependence of the temperature coefficients of resistance (TCR) as high as -3.2~-6.2 %/K at the temperature range from 20 ºC to 80 ºC was obtained for the film fired at Tf = 580 ºC. From these experimental results, it was found that wide windows of firing conditions for fabricating V0.75Ti0.25O2 thin film can be obtained in the MOD process.
The transactions of the Institute of Electrical Engineers of Japan.A
The Journal of the Institute of Electrical Engineers of Japan