二つのBi₁₂SiO₂₀結晶組み合わせでのポッケルス効果による変調率の検討

抄録

This paper deals with the theoretical analysis and experimental investigation of the modulation depth caused by Pockels effect in two Bi₁₂SiO₂₀ (BSO) crystals which have optical activity. At first, theoretical analysis was carried out by supposing the elliptical polarization caused by the Pockels effect passed through the BSO crystals in company with the rotation of the polarization plane caused by optical activity. Then, experiments were carried out using a single BSO and two BSO crystals placed successively, and compared with the calculated results. The BSO was 5mm in thickness and modulated with a longitudinally applied voltage. It was clarified that the experimental results agreed well with the calculated results. It was also clarified that the modulation depth of the two BSO crystals applied with opposite polarity voltage at the analyzer angle 0° was about 2.7 times higher than that of the single BSO, and this two BSO system was very effective against higher sensitivity of the optical voltage measurement.