電気学会論文誌D(産業応用部門誌)
Online ISSN : 1348-8163
Print ISSN : 0913-6339
ISSN-L : 0913-6339
パワーモジュール内部の配線形状に起因する分流アンバランスの解析と実験的検証
大井 健史奥田 達也武藤 浩隆菊永 敏之松本 秀雄
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2001 年 121 巻 3 号 p. 333-339

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Chip current imbalances caused by the difference of impedance of each parallel circuit in an Insulated Gate Bipolar Transistor (IGBT) module were analyzed using the three dimensional finite element method (3D-FEM). The circuit inductance of the test module was also calculated using the results of the analysis. Measurements of the current of each parallel circuit and circuit inductance using a test module were performed to confirm the results of the analysis. The results of the analysis were in good agreement with the experimental results. The 3D-FEM analysis was therefore used to design a new structure of bus bars in a module and the results presented a good current sharing.

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