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IEEJ Journal of Industry Applications
Vol. 4 (2015) No. 6 p. 767-775

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http://doi.org/10.1541/ieejjia.4.767

IPEC-Hiroshima

High voltage high power semiconductor devices are being used for grid integration of renewable energy sources. 1200V/100A SiC-MOSFETs, 1700V SiC-MOSFETs, 1700V SiC-Schottky diodes, 10kV SiC-MOSFETs, and 10kV JBS diodes have proved to be useful for high-voltage applications. High-voltage SiC devices enable high-switching frequency operation thus reducing the size of the parasitic element. This paper focuses on an alternative approach to the 0.9MW PV power plant currently being constructed in Brazil. The objective of the use of high power SiC devices for integration of the PV power plant into 13.8kV grid is to provide higher efficiency and reduced size and volume.

Copyright © 2015 The Institute of Electrical Engineers of Japan

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