IEEJ Journal of Industry Applications
Online ISSN : 2187-1108
Print ISSN : 2187-1094
ISSN-L : 2187-1094

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Technical Trends of SiC Power Semiconductor Devices and Their Applications in Power Electronics
Naoto Fujishima
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ジャーナル フリー 早期公開

論文ID: 23005497

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Power electronics technologies play important roles in energy conservation and low-carbon goals, whereby power devices, such as silicon IGBTs and SiC-MOSFETs, are key components that support the efficient use of energy by power electronics and are indispensable for power supply and control. This paper provides an overview of market trends for power semiconductor devices, and introduces and focuses on state-of-the-art SiC power devices, such as SiC-MOSFET and SiC-SBD. This paper also reports on the requirements and applications of power electronics equipment that utilizes SiC power devices.

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