CMOS互換「配線MEMSプロセス」によるMEMS-CMOS LSIモノリシック集積化圧力センサ

抄録

Back-end-of-line (BEOL) MEMS processes for a compact, high-precision pressure sensor was developed. A CMOS-LSI-integrated capacitive pressure-sensor was fabricated with a chip size of 0.72 mm² using developed BEOL MEMS processes. Multi-sensor chip (with a size of 1.7 by 1.9 mm²) which consists of pressure sensor, temperature sensor and high-precision measurement circuits was also fabricated, and precise atmospheric pressure measurement (∼ 10 Pa) was demonstrated. As the sensitivity of pressure sensor can be easily changed by the size of its MEMS capacitors, the pressure sensor is thus suitable for various pressure-range applications.