IEEJ Transactions on Sensors and Micromachines
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
Paper
Structural Properties of Si Films Deposited by Plasma Enhanced Chemical Transport
Takaaki Murakami, Yukihisa Yoshida, Yoshinori Yokoyama, Toshihiro Itoh
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Keywords: plasma enhanced chemical transport, silicon deposition, stress
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2010 Volume 130 Issue 6 Pages 219-222

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Abstract
Structural properties of Si films deposited at 300°C, using plasma enhanced chemical transport method, were investigated. Obtained deposition rate was 6.5nm/min and calculated residual stress was about 300Mpa (compressive). X-ray diffraction (XRD) pattern and Raman spectra indicate that the films on both on Si and glass substrates are composed mostly of poly-Si. And the crystallite size on glass is smaller than that of the Si substrate.
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© 2010 by the Institute of Electrical Engineers of Japan
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