2011 年 131 巻 3 号 p. 130-131
This paper reports a novel silicon bulk-micromachining process using deep reactive ion etching (DRIE) of silicon and electroplating of gold in order to realize a low-loss radio frequency (RF) waveguide. The waveguide developed in the handle wafer was electrically isolated by air, laterally actuated to close metal-to-metal contacts, and driven by an electrostatic actuator integrated on the SOI sides by the layer-separation technique. A thinned silicon-on-insulator (SOI) wafer of high-resistive handle layer and low-resistive active layer was chosen to meet the process and design requirements for a compact low loss switch.
J-STAGEがリニューアルされました! https://www.jstage.jst.go.jp/browse/-char/ja/