J-STAGE トップ  >  資料トップ  > 書誌事項

電気学会論文誌E(センサ・マイクロマシン部門誌)
Vol. 132 (2012) No. 3 P 48-52

記事言語:

http://doi.org/10.1541/ieejsmas.132.48

論文

The characteristics of silicon films deposited at 700 Torr by plasma enhanced chemical transport were investigated. The Si films were poly-crystalline, and the hall mobility was 1.9 cm2/Vs. These results indicate that our Si films are comparable with poly-crystalline Si deposited by conventional plasma enhanced CVD. We fabricated a strain gauge sensor using our silicon film. The output voltage showed a good linearity to the pressure.

Copyright © 電気学会 2012

この記事を共有