Design of an Ultra-fast CMOS-MEMS Multilayer Infrared Emitter

抄録

We report on a novel design of a complementary metal oxide semiconductor microelectromechanical system (CMOS-MEMS) multilayer infrared (IR) emitter based on Central Semiconductor Manufacturing Corporation (CSMC) 0.18-µm 1-Poly-6-Metal (1P6M) CMOS technology. The locations of the electromechanical contact points are optimized on the IR emitter plate to enhance the thermal conduction, thereby improving the response speed to at least 1.6 kHz. The double-deck structures of the MEMS IR emitter suspended over integrated circuits have compatibility with the post-CMOS processes, which is beneficial to develop IR emitters of a high fill-factor and a high radiance. In the emitter plate, a 1.4 kΩ heating resistor is composed of tungsten via chains to make the working current for the emitter as low as possible. A possible post-CMOS MEMS process is proposed without any violation of design rules, thus maintaining the compatibility with most CMOS technologies. Finally, the enhancement of the operation speed is verified using a simulation of the thermal radiation properties of microemitters with the optimized contact locations.