抄録
In this study, the author attempted to measure the characteristics of a region below room temperature
by utilizing the endothermic action of a Peltier device. The study was conducted as part of experimental
work to estimate the energy band gap of silicon materials by measuring the voltage-current characteristics
of diodes considering temperature as a parameter. A Peltier Device was used in the experiment with
temperatures ranging from room temperature to low temperature. From the experimental results, the
energy gap of the silicon material was estimated to be approximately 1 eV.
https://ror.org/011srkg41 
