抄録
Output characteristics of two-dimensional solid-state detector for charged particles has been analyzed by ion irradiation with keV level energy. The detector was designed by CMOS rule and constructed as stacked CMOS-device[1]. The detector was operated under nondestructive readout mode due to correction of fixed pattern noises among pixels and reset noise of a pixel. The output signals of a pixel correlated linearly with incoming ions over the range of four orders of magnitude. Non-linear effects of the output is about 10% over the whole dynamic range of a pixel. The dominant effects of the non-linear components are reset voltage drop down by overlap capacitance. After correction of the drop down effect the nonlinearity reduced to percent level, the percent level nonlinearity was due to voltage dependence of pixel capacitance with ion irradiation.
