Multiple phase transition observed in carrier mobilities of (BEDT-TTF)(TCNQ) crystalline field effect transistor

Abstract

Temperature dependence of electron and hole mobility were investigated for (BEDT-TTF) (TCNQ) crystalline field effect transistors. The field-effect electron and hole mobility abruptly increased at 280K, which will due to a phase transition occuring at the channel region of the field-effect transistor. In addition, ferroelectricity-like behavior was observed below 280K.