SrGa_2S_4:Eu^<2+> thin film phosphors, which are expected as green emitting phosphors for FEDs and white-LEDs, were prepared with two-source electron beam evaporation technique in which SrS:Eu and Ga_2S_3:Eu pellets were used as source materials and these were evaporated simultaneously. To lower annealing temperature to make the film phosphor was tried by using both thermal annealing at 500℃ and laser annealing, in addition to the conventional high temperature at around 850℃. The diffraction peaks of SrGa_2S_4 by XRD and the green emission peaked at 530nm of SrGa_2S_4:Eu^<2+> in PL and CL were obtained also by the [lower temperature and laser] annealing. These results mean that the SrGa_2S_4:Eu^<2+> thin film phosphors can be prepared also by the low temperature annealing under an assist with the laser annealing. However, the luminance of the film annealed by this method is about 2000cd/m^2 which is lower than 30000cd/m^2 of the film annealed at high temperature annealing under excitation with 10kV and 60μA/cm^2. Therefore, the improvement of the crystallinity and luminescent properties of the films annealed by the [lower temperature and laser] annealing is the issue in future.
